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DISCRETE SEMICONDUCTORS
DATA SHEET
BFG10W/X UHF power transistor
Product specification 1995 Sep 22
NXP Semiconductors
Product specification
UHF power transistor
FEATURES High efficiency Small size discrete power amplifier 900 MHz and 1.9 GHz operating areas Gold metallization ensures excellent reliability. APPLICATIONS Common emitter class-AB operation in hand-held radio equipment up to 1.9 GHz. DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a plastic, 4-pin dual-emitter SOT343N package. PINNING PIN 1 2 3 4 DESCRIPTION collector emitter base emitter
Marking code: T5.
BFG10W/X
lfpage
4
3
1 Top view
2
MBK523
Fig.1 SOT343N. QUICK REFERENCE DATA RF performance at Tamb = 25 C in a common-emitter test circuit. MODE OF OPERATION Pulsed, class-AB, duty cycle: < 1 : 2; tp = 10 ms Pulsed, class-AB, duty cycle: < 1 : 8; tp = 4.6 ms f (GHz) 1.9 0.9 0.9 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC IC(AV) Ptot Tstg Tj PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) average collector current total power dissipation storage temperature junction temperature up to Ts = 102 C; note 1 CONDITIONS open emitter open base open collector 65 MIN. MAX. 20 10 2.5 250 250 400 +150 175 V V V mA mA mW C C UNIT VCE (V) 3.6 6 6 PL (mW) 200 650 360 Gp (dB) 5 10 12.5 c (%) 50 50 50
THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER thermal resistance from junction to soldering point CONDITIONS up to Ts = 102 C; note 1; Ptot = 400 mW VALUE 180 UNIT K/W
Note to the Limiting values and Thermal characteristics 1. Ts is the temperature at the soldering point of the collector pin.
1995 Sep 22
2
NXP Semiconductors
Product specification
UHF power transistor
CHARACTERISTICS Tj = 25 C (unless otherwise specified). SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICES hFE Cc Cre PARAMETER collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cut-off current DC current gain collector capacitance feedback capacitance CONDITIONS open emitter; IC = 0.1 mA open base; IC = 5 mA open collector; IE = 0.1 mA VCE = 6 V; VBE = 0 IC = 50 mA; VCE = 5 V IE = ie = 0; VCB = 6 V; f = 1 MHz IC = 0; VCE = 6 V; f = 1 MHz MIN. 20 10 2.5 25
BFG10W/X
MAX. 100 3 2 V V V
UNIT
A pF pF
103 handbook, full pagewidth Zth j-a (K/W) =1 0.75 102 0.5 0.33 0.2
MBG431
10
0.1 0.05 0.02 0.01
P
= T
tp
tp T 1 10-6 10-5 10-4 10-3 10-2 10-1
t
tp (s)
1
Fig.2 Transient thermal impedance from junction to soldering point as a function of pulse time; typical values.
1995 Sep 22
3
NXP Semiconductors
Product specification
UHF power transistor
BFG10W/X
handbook, halfpage
2.0
MLC819
Cc (pF) 1.5
1.0
0.5
0 0 2 4 6 8 10 V CB (V)
Fig.3
Collector capacitance as a function of collector-base voltage.
1995 Sep 22
4
NXP Semiconductors
Product specification
UHF power transistor
APPLICATION INFORMATION RF performance at Tamb = 25 C in a common-emitter test circuit. MODE OF OPERATION Pulsed, class-AB, duty cycle: < 1 : 2; tp = 10 ms Pulsed, class-AB, duty cycle: < 1 : 8; tp = 5 ms f (GHz) 1.9 0.9 0.9 Ruggedness in class-AB operation VCE (V) 3.6 6 6 PL (mW) 200 650 360 Gp (dB)
BFG10W/X
c (%) 50; typ. 60 50 50
5; typ. 7 10 12.5
The BFG10W/X is capable of withstanding a load mismatch corresponding to VSWR = 6 : 1 through all phases under pulsed conditions up to a supply voltage of 8.6 V under the conditions: 900 MHz; 650 mW; tp = 4.6 ms; duty cycle of 1 : 8 and up to a supply voltage of 5.5 V under the conditions: 1.9 GHz; 200 mW; tp = 10 ms; duty cycle of 1 : 2.
MLC820
MBG194
handbook, halfpage
10
Gp
(dB) 8
c
100 c (%) 80
handbook, halfpage
16
80 Gp c 60 c (%)
Gp
(dB) 12
6
Gp
60 8 40
4
40 4
20
2
20
0 0 100 200 300
0 400 500 P L (mW)
0 0.3
20 0.5 0.7 0.9 1.1 P L (mW)
Pulsed, class-AB operation. VCE = 3.6 V; f = 1.9 GHz; duty cycle < 1 : 2. Circuit optimized for PL = 200 mW.
Pulsed, class-AB operation. VCE = 6 V; f = 900 MHz; duty cycle < 1 : 8. Circuit optimized for PL = 600 mW.
Fig.4
Power gain and efficiency as functions of load power; typical values.
Fig.5
Power gain and efficiency as functions of load power; typical values.
1995 Sep 22
5
NXP Semiconductors
Product specification
UHF power transistor
List of components (see Fig.6) COMPONENT TR1 C1, C4, C7 C2 C3 C5 C6 C8 C9 L1 L4 L2, L3 R1 R2 R3 Notes 1. VBE at 1 mA must be 0.65 V. 2. American Technical Ceramics type 100A or capacitor of same quality. 3. Resonant at 1900 MHz. DESCRIPTION bias transistor, BC548 or equivalent capacitor; notes 2 and 3 capacitor; note 2 capacitor; note 2 capacitor; note 2 capacitor; note 2 Philips multilayer capacitor Philips capacitor 6 turns enamelled 0.7 mm copper wire 2 turns enamelled 0.7 mm copper wire RF choke, Philips metal film resistor metal film resistor metal film resistor 275 100 10 VALUE note 1 120 pF 6.8 pF 0.5 pF 1.2 pF 1.9 pF 1 nF, 10 V 1500 F, 10 V length 3.5 mm length 3 mm DIMENSIONS
BFG10W/X
CATALOGUE No.
2222 032 14152
4312 020 36690
handbook, full pagewidth
+Vbias R1
+VCC
R2 R3 TR1 L2 L3
C9
C8 L1 C1
C4 L4 C7 DUT
C2
C3
C5
C6
MBG428
PCB RT5880, thickness 0.79 mm.
Fig.6 Class-AB test circuit at f = 900 MHz.
1995 Sep 22
6
NXP Semiconductors
Product specification
UHF power transistor
List of components (see Fig.6) COMPONENT TR1 C1, C6, C7, C8 C2 C3 C4 C5 C9, C10 L1, L2 R1, R2 R3, R4 Notes 1. VBE at 1 mA must be 0.65 V. 2. American Technical Ceramics type 100A or capacitor of same quality. 3. Resonant at 1900 MHz. DESCRIPTION bias transistor, BC548 or equivalent capacitor; notes 2 and 3 capacitor; note 2 capacitor; note 2 capacitor; note 2 capacitor; note 2 Philips capacitor RF choke, Philips metal film resistor metal film resistor 75 10 VALUE note 1 24 pF 0.4 pF 2.4 pF 0.5 pF 1.2 pF 1500 F, 10 V DIMENSIONS
BFG10W/X
CATALOGUE No.
2222 032 14152 4330 030 36301
handbook, full pagewidth
+Vbias
R1
R2
L1 L2
TR1 C9 C7 C8 C10
+VCC
C1
DUT
C6
C2
C3
C4
C5
MBG429
PCB RT5880, thickness 0.79 mm.
Fig.7 Class-AB test circuit at f = 1.9 GHz.
1995 Sep 22
7
NXP Semiconductors
Product specification
UHF power transistor
PACKAGE OUTLINE
Plastic surface-mounted package; 4 leads
BFG10W/X
SOT343N
D
B
E
A
X
y
HE e
vMA
4
3
Q
A A1 c
1
b1 e1 bp
2
wM B Lp detail X
0
1 scale
2 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.4 0.3 b1 0.7 0.5 c 0.25 0.10 D 2.2 1.8 E 1.35 1.15 e 1.3 e1 1.15 HE 2.2 2.0 Lp 0.45 0.15 Q 0.23 0.13 v 0.2 w 0.2 y 0.1
OUTLINE VERSION SOT343N
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-05-21 06-03-16
1995 Sep 22
8
NXP Semiconductors
Product specification
UHF power transistor
DATA SHEET STATUS DOCUMENT STATUS(1) Objective data sheet Preliminary data sheet Product data sheet Notes 1. Please consult the most recently issued document before initiating or completing a design. PRODUCT STATUS(2) Development Qualification Production DEFINITION
BFG10W/X
This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DEFINITIONS Product specification The information and data provided in a Product data sheet shall define the specification of the product as agreed between NXP Semiconductors and its customer, unless NXP Semiconductors and customer have explicitly agreed otherwise in writing. In no event however, shall an agreement be valid in which the NXP Semiconductors product is deemed to offer functions and qualities beyond those described in the Product data sheet. DISCLAIMERS Limited warranty and liability Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors' aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Right to make changes NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer's sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer's applications and products planned, as well as for the planned application and use of customer's third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products.
1995 Sep 22
9
NXP Semiconductors
Product specification
UHF power transistor
NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer's applications or products, or the application or use by customer's third party customer(s). Customer is responsible for doing all necessary testing for the customer's applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer's third party customer(s). NXP does not accept any liability in this respect. Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer's general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
BFG10W/X
Export control This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. Quick reference data The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Non-automotive qualified products Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. In the event that customer uses the product for design-in and use in automotive applications to automotive specifications and standards, customer (a) shall use the product without NXP Semiconductors' warranty of the product for such automotive applications, use and specifications, and (b) whenever customer uses the product for automotive applications beyond NXP Semiconductors' specifications such use shall be solely at customer's own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors' standard warranty and NXP Semiconductors' product specifications.
1995 Sep 22
10
NXP Semiconductors
provides High Performance Mixed Signal and Standard Product solutions that leverage its leading RF, Analog, Power Management, Interface, Security and Digital Processing expertise
Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version.
Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com
(c) NXP B.V. 2010 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands R77/01/pp11 Date of release: 1995 Sep 22

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